| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
|
|
|---|---|---|
| Page(s) | C4-655 - C4-658 | |
| DOI | https://doi.org/10.1051/jphyscol:19814144 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-655-C4-658
DOI: 10.1051/jphyscol:19814144
Laboratoire de Spectroscopie II, Equipe de recherche associée au C.N.R.S., Université des Sciences et Techniques du Languedoc, 34060 Montpellier, France
J. Phys. Colloques 42 (1981) C4-655-C4-658
DOI: 10.1051/jphyscol:19814144
EFFECT OF TEMPERATURE ON OPTICAL PROPERTIES OF GLOW DISCHARGE HYDROGENATED AMORPHOUS SILICON FILMS
A. Donnadieu, B. Yous, J.M. Berger, J.P. Ferraton and J. RobinLaboratoire de Spectroscopie II, Equipe de recherche associée au C.N.R.S., Université des Sciences et Techniques du Languedoc, 34060 Montpellier, France
Abstract
Optical properties of hydrogenated amorphous silicon films, prepared by glow discharge onto fused quartz substrates held at temperature TS varying between 50 and 350°C, were determined from near normal specular reflectance and transmittance measurements in the energy range 0.5 to 5.5 eV. The measurements were done at various temperature Tm in the range 95 to 750 K. When Tm becomes higher than TS, irreversible variations of optical gap appear. An interpretation in terms of an hydrogen evolution and a rearrangement of the matrix under annealing is proposed.