| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
|
|
|---|---|---|
| Page(s) | C4-643 - C4-646 | |
| DOI | https://doi.org/10.1051/jphyscol:19814141 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-643-C4-646
DOI: 10.1051/jphyscol:19814141
Dept. of Physics and Solid State Institute, Technion-Israel Institute of Technology, 32000 Haifa, Israel
J. Phys. Colloques 42 (1981) C4-643-C4-646
DOI: 10.1051/jphyscol:19814141
GLOW-DISCHARGE a-Si : F PREPARED FROM SiF2 GAS
R. Weil, M. Janai, B. Pratt, K. Levin and F. MoserDept. of Physics and Solid State Institute, Technion-Israel Institute of Technology, 32000 Haifa, Israel
Abstract
A system for the deposition of fluorinated amorphous silicon by DC glow-discharge in a plasma of SiF2 + SiF4 is described. The a-Si : F films contain from 0.5% to 15% fluorine with no hydrogen present. Fluorine content was determined by nuclear reaction, ESCA and IR spectroscopy. The fluorine content of the films was found not to depend on the substrate temperature. Electrical and optical as well as ESR measurements, were made on the films as a function of fluorine content. No influence of the fluorine was evident on the conductivity, photoconductivity or ESR signal, showing that the fluorine in the films did not satisfy dangling bonds.