J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
|Page(s)||C4-635 - C4-638|
J. Phys. Colloques 42 (1981) C4-635-C4-638
DEPOSITION OF a-Si : H BY HOMOGENEOUS CVDB.A. Scott, R.M. Plecenik and E.E. Simonyi
IBM T.J. Watson Research Center, Yorktown Heights, NY, U.S.A.
A new method (HOMOCVD) of amorphous hydrogenated silicon (a-Si : H) deposition is reported in which SiH4 is thermally decomposed in the vapor state to produce SiH2 as the reactive intermediate. The resulting films contain up to 30 atomic % hydrogen and properties comparable to glow discharge-produced material. Since the reactive intermediate and its chemistry are unambiguously known, HOMOCVD provides insight into the nature of the deposition process.