| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|
|---|---|---|
| Page(s) | C4-635 - C4-638 | |
| DOI | https://doi.org/10.1051/jphyscol:19814139 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-635-C4-638
DOI: 10.1051/jphyscol:19814139
IBM T.J. Watson Research Center, Yorktown Heights, NY, U.S.A.
J. Phys. Colloques 42 (1981) C4-635-C4-638
DOI: 10.1051/jphyscol:19814139
DEPOSITION OF a-Si : H BY HOMOGENEOUS CVD
B.A. Scott, R.M. Plecenik and E.E. SimonyiIBM T.J. Watson Research Center, Yorktown Heights, NY, U.S.A.
Abstract
A new method (HOMOCVD) of amorphous hydrogenated silicon (a-Si : H) deposition is reported in which SiH4 is thermally decomposed in the vapor state to produce SiH2 as the reactive intermediate. The resulting films contain up to 30 atomic % hydrogen and properties comparable to glow discharge-produced material. Since the reactive intermediate and its chemistry are unambiguously known, HOMOCVD provides insight into the nature of the deposition process.