Numéro
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
Page(s) C4-617 - C4-620
DOI https://doi.org/10.1051/jphyscol:19814135
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors

J. Phys. Colloques 42 (1981) C4-617-C4-620

DOI: 10.1051/jphyscol:19814135

MEASUREMENT AND ANALYSIS OF CURRENT TRANSIENTS IN WELL-CHARACTERIZED a-Si:H

M.J. Thompson1, N.M. Johnson2 and R.A. Street2

1  Dept. of Elec. Eng., University of Sheffield, England
2  Xerox Palo Alto Research Centers, Palo Alto, CA 94304, U.S.A.


Abstract
Deep-level current transient spectroscopy (DLTS) and thermally stimulated current measurements have been performed on a-Si:H Schottky barriers over a temperature range of 10 - 300K. Current injection and photoexcitation have been used to accomplish trap filling. The voltage dependence of the transient current in DLTS spectra is presented, and the contribution from interface states was found to be negligible. Deep levels have been studied in a wide range of a-Si:H material with spin densities varying from 1015 - 3 x 1017 cm-3. The contributions to the current transient spectra from carrier transport and thermal emission from deep traps are evaluated.