Numéro
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
Page(s) C4-601 - C4-604
DOI https://doi.org/10.1051/jphyscol:19814131
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors

J. Phys. Colloques 42 (1981) C4-601-C4-604

DOI: 10.1051/jphyscol:19814131

OPTICAL DLTS MEASUREMENTS OF LOCALIZED STATES IN AMORPHOUS CHALCOGENIDE SEMICONDUCTORS

M. Okuda, H. Naito, H. Nakayama and T. Nakau

Department of Electronics, University of Osaka Prefecture, Mozu, Sakai, Osaka, Japan 591


Abstract
New combined optical/thermal method (optical DLTS) for the investigation of gap states is presented. The concentration and energy distribution of the gap states have been studied. The optical DLTS signal S(T) vs. temperature is calculated from the photoconductivity decay I(t,T). The effective levels and density of states for amorphous Se and As2Se3 films were obtained.