| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-539 - C4-542 | |
| DOI | https://doi.org/10.1051/jphyscol:19814116 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-539-C4-542
DOI: 10.1051/jphyscol:19814116
1 Division of Engineering and Department of Physics, Brown University, Providence, Rhode Island 02912, U.S.A.
2 Max Planck Institute für Festkörperphysik, Stuttgart, F.R.G.
J. Phys. Colloques 42 (1981) C4-539-C4-542
DOI: 10.1051/jphyscol:19814116
PICOSECOND DYNAMICS OF CARRIERS IN AMORPHOUS SEMICONDUCTORS
Z. Vardeny1, J. Tauc1 and C.J. Fang21 Division of Engineering and Department of Physics, Brown University, Providence, Rhode Island 02912, U.S.A.
2 Max Planck Institute für Festkörperphysik, Stuttgart, F.R.G.
Abstract
Using time resolved photoinduced absorption with subpicosecond resolution we studied hot carrier thermalization followed by deep trapping and recombination in a-Si, a-Si : H, a-Si : F, a-Si : H : F and a-As2Se3. In a-Se and a-As2S3-xSex (0.25 ≤ x ≤ 0.75) the observed relaxations were attributed to geminate recombination.