| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-515 - C4-518 | |
| DOI | https://doi.org/10.1051/jphyscol:19814110 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-515-C4-518
DOI: 10.1051/jphyscol:19814110
1 Ceramic Institute of Shangaï, China
2 Laboratoire de Physique des Solides, CNRS, 92190 Bellevue, France
J. Phys. Colloques 42 (1981) C4-515-C4-518
DOI: 10.1051/jphyscol:19814110
DOPING EFFECTS IN TRANSPORT PROPERTIES IN a-Si p-n JUNCTIONS
Wu Zhong Yan1, Y. Marfaing2 and J. Dixmier21 Ceramic Institute of Shangaï, China
2 Laboratoire de Physique des Solides, CNRS, 92190 Bellevue, France
Abstract
The electric transport mechanisms in a-Si : H junctions have been studied as a function of impurity doping level. At low doping current is limited by generation-recombination in the depletion layer. At high doping (10-3 Ω-1 x cm-1 on the junction sides) tunnel current are observed with an effective tunneling gap of 0.8 eV. The differential conductance around the origine is 3.10-1Ω-1cm-2.