J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
|Page(s)||C4-511 - C4-514|
J. Phys. Colloques 42 (1981) C4-511-C4-514
A STUDY OF A NEW HETEROJUNCTION MADE OF n-TYPE SILICON AND p-TYPE AMORPHOUS SEMICONDUCTORY. Sawan, M. El-Gabaly, F. Wakim and S. Atari
University of Kuwait, Kuwait
A p-n heterojunction was prepared by depositing a thin film of p-type amorphous As2Se3Cux (x = 0.2, 0.4 and 1.0) on n-type crystalline silicon wafers. The I-V characteristics of the junction were typical of those of p-n junctions both in the dark and under illumination. The preliminary optimum characteristics were obtained with an annealed p-type amorphous As2Se3Cu0.4 with an optical gap of 1.43 eV. A maximum open circuit voltage (Voc) of 0.37 V and short circuit current (Isc) of 10 mA/cm2 was observed under solar radiation of 800 w/m2.