A STUDY OF A NEW HETEROJUNCTION MADE OF n-TYPE SILICON AND p-TYPE AMORPHOUS SEMICONDUCTOR

Y. Sawan; M. El-Gabaly; F. Wakim; S. Atari

doi:doi:10.1051/jphyscol:19814109

Issue		J. Phys. Colloques Volume 42, Number C4, Octobre 1981 Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors


Page(s)		C4-511 - C4-514
DOI		https://doi.org/10.1051/jphyscol:19814109

Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors

J. Phys. Colloques 42 (1981) C4-511-C4-514
DOI: 10.1051/jphyscol:19814109

A STUDY OF A NEW HETEROJUNCTION MADE OF n-TYPE SILICON AND p-TYPE AMORPHOUS SEMICONDUCTOR

Y. Sawan, M. El-Gabaly, F. Wakim and S. Atari

University of Kuwait, Kuwait

Abstract
A p-n heterojunction was prepared by depositing a thin film of p-type amorphous As₂Se₃Cu_x (x = 0.2, 0.4 and 1.0) on n-type crystalline silicon wafers. The I-V characteristics of the junction were typical of those of p-n junctions both in the dark and under illumination. The preliminary optimum characteristics were obtained with an annealed p-type amorphous As₂Se₃Cu_0.4 with an optical gap of 1.43 eV. A maximum open circuit voltage (V_oc) of 0.37 V and short circuit current (I_sc) of 10 mA/cm² was observed under solar radiation of 800 w/m².