| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-499 - C4-502 | |
| DOI | https://doi.org/10.1051/jphyscol:19814106 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-499-C4-502
DOI: 10.1051/jphyscol:19814106
Xerox Webster Research Center, Webster, N.Y., U.S.A.
J. Phys. Colloques 42 (1981) C4-499-C4-502
DOI: 10.1051/jphyscol:19814106
THEORETICAL ANALYSES OF a-Si : H DIODE CHARACTERISTICS
I. Chen and S. LeeXerox Webster Research Center, Webster, N.Y., U.S.A.
Abstract
A mathematical modelling of a-Si : H Schottky barrier diode characteristics has revealed an interesting relation between the observed quality factor and the composition of the diode current. Each component, i.e. the drift/diffusion current JD or the recombination current JR has a characteristic value of the quality factor, β < 1.1 for JD and β > 1.8 for JR. The relative magnitudes of the two components vary with the device thickness, the density of localized states, the surface barrier potential and the recombination mechanism. Thus, the observed values of quality factor can be correlated with the material parameters and indicate the upper or lower limits of the carrier recombination lifetime.