| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-491 - C4-494 | |
| DOI | https://doi.org/10.1051/jphyscol:19814104 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-491-C4-494
DOI: 10.1051/jphyscol:19814104
Institute of Energy Conversion, University of Delaware, Newark, Delaware 19711, U.S.A.
J. Phys. Colloques 42 (1981) C4-491-C4-494
DOI: 10.1051/jphyscol:19814104
MINORITY CARRIER TRANSPORT IN DEPLETION LAYERS OF n-i-p a-Si : H SOLAR CELLS
V. Dalal and F. AlvarezInstitute of Energy Conversion, University of Delaware, Newark, Delaware 19711, U.S.A.
Abstract
Transport properties of electrons and holes in i layers of pin a-Si solar cells are important in determining the current collection efficiency of these cells. In this paper, we describe a new technique for measuring the (μτ) product of minority carriers in the undoped layer of an a-Si : H cell. It is shown that the transport properties in depletion layers of solar cells can be very different from the transport in virgin i layers, and that under certain circumstances, electrons can become the minority carriers, in strong contrast to virgin i layers, where holes are the minority carriers.