Numéro
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
Page(s) C4-63 - C4-66
DOI https://doi.org/10.1051/jphyscol:1981410
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors

J. Phys. Colloques 42 (1981) C4-63-C4-66

DOI: 10.1051/jphyscol:1981410

NEW NUMERICAL METHOD FOR THE ELECTRONIC PROPERTIES OF DISORDERED SYSTEMS

A. MacKinnon1, B. Kramer1 and W. Graudenz2

1  Referat für Theoretische Physik, Physikalisch Technische Bundesanstalt, 3300 Braunschweig, F.R.G.
2  Universität Dortmund, 4600 Dortmund, F.R.G.


Abstract
We present results of calculations of the localisation length and conductivity of 2 dimensional systems described by the Anderson Hamiltonian. A recently developed method for calculating properties of very long 1D systems is generalised for long strips of varying thickness. We observe scaling behaviour with the thickness but no evidence of an Anderson transition in 2D.