Numéro |
J. Phys. Colloques
Volume 41, Numéro C4, Mai 1980
Laser Induced Nucleation in Solids / Nucléation induite par laser dans les solides
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Page(s) | C4-71 - C4-74 | |
DOI | https://doi.org/10.1051/jphyscol:1980411 |
Laser Induced Nucleation in Solids / Nucléation induite par laser dans les solides
J. Phys. Colloques 41 (1980) C4-71-C4-74
DOI: 10.1051/jphyscol:1980411
Faculté des Sciences - Université de l'Etat, Mons, Belgium
J. Phys. Colloques 41 (1980) C4-71-C4-74
DOI: 10.1051/jphyscol:1980411
LASER ANNEALING OF ELEMENTAL AND COMPOUND SEMICONDUCTOR FILMS
R. Andrew, L. Baufay, L.D. Laude, M. Lovato et M. WauteletFaculté des Sciences - Université de l'Etat, Mons, Belgium
Abstract
We describe here some laser pulse annealing experiments which differ from most in that our specimens are in the form of thin films either free standing (i.e. mounted on a TEM grid), or supported by an insulating substrate. We study thin films partly for reasons of current and future technological interest and partly because some parameters affecting laser annealing can thus be more easily controlled, and hence provide an opportunity to study fundamentals of laser induced nucleation, crystal growth and solid atomic diffusion.