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Cited article:

POSITION RESOLVED CARRIER LIFETIME MEASUREMENTS IN SILICON POWER DEVICES BY TIME RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY

G. BOHNERT, R. HÄCKER, A. HANGLEITER

J. Phys. Colloques, 49 C4 (1988) C4-617-C4-620

DOI: https://doi.org/10.1051/jphyscol:19884128

PDF (1.274 MB)

This article has been cited by the following article(s):

A new technique for depth resolved carrier recombination measurements applied to proton irradiated thyristors

J. Linnros, P. Norlin and A. Hallen
IEEE Transactions on Electron Devices 40 (11) 2065 (1993)
DOI: 10.1109/16.239750
See this article