| Issue |
J. Phys. Colloques
Volume 50, Number C6, Juin 1989
Beam Injection Assessment of Defects in SemiconductorsInternational Workshop |
|
|---|---|---|
| Page(s) | C6-179 - C6-179 | |
| DOI | https://doi.org/10.1051/jphyscol:1989633 | |
Beam Injection Assessment of Defects in Semiconductors
International Workshop
J. Phys. Colloques 50 (1989) C6-179-C6-179
DOI: 10.1051/jphyscol:1989633
1 Departamento de Física de Materiales, Facultad de Físicas, Universidad Complutense, SP-28040 Madrid, Spain
2 Service de Physique, département de Recherche Fondamentale, Centre d'Etudes Nucléaires de Grenoble, F-38041 Grenoble, France
International Workshop
J. Phys. Colloques 50 (1989) C6-179-C6-179
DOI: 10.1051/jphyscol:1989633
CATHODOLUMINESCENCE AND POSITRON ANNIHILATION STUDY OF DEFECT DISTRIBUTION IN III-V WAFERS
F. DOMÍNGUEZ-ADAME1, B. MÉNDEZ1, J. PIQUERAS1, N. DE DIEGO1, J. LLOPIS1 et P. MOSER21 Departamento de Física de Materiales, Facultad de Físicas, Universidad Complutense, SP-28040 Madrid, Spain
2 Service de Physique, département de Recherche Fondamentale, Centre d'Etudes Nucléaires de Grenoble, F-38041 Grenoble, France
Abstract
Positron annihilation (PA) is a sensitive technique for detection of vacancy-type defects in crystals, that has been widely used in recent years to study defects in semiconductors (1). On the other side, CL and other luminescence techniques have been applied (2) to study the defect distribution in semiconductor wafers. In some cases PA can be useful to interpret results obtained by CL-SEM (3). In this work PA and CL have been used to investigate the distribution and nature of defects in GaP : S, GaAs : Te and undoped SI GaAs wafers. CL intensity, dislocation density and vacancy concentration profiles have been measured. The latter has been obtained by positron lifetime measurements.