| Issue |
J. Phys. Colloques
Volume 49, Number C4, Septembre 1988
ESSDERC 8818th European Solid State Device Research Conference |
|
|---|---|---|
| Page(s) | C4-441 - C4-444 | |
| DOI | https://doi.org/10.1051/jphyscol:1988493 | |
ESSDERC 88
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-441-C4-444
DOI: 10.1051/jphyscol:1988493
1 Dipartimento di Ingegneria, Università di Trento, I-38050 Mesiano di Povo (TN), Italy
2 Dipartimento di Elettronica e Informatica dell'Università, I-35131 Padova, Italy
3 Telettra SpA, Via Trento 30, I-20059 Vimercate (MI), Italy
4 Departimento di Elettronica ed Elettrotecnica dell'Università, I-70125 Bari, Italy
5 Dept. EECS, University of California at San Diego, La Jolla, CA 92093, U.S.A.
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-441-C4-444
DOI: 10.1051/jphyscol:1988493
NON-ALLOYED Ge/Pd OHMIC CONTACT FOR GaAs MESFET'S
A. PACCAGNELLA1, C. CANALI2, G. DONZELLI3, E. ZANONI4, R. ZANETTI2 et S.S. LAU51 Dipartimento di Ingegneria, Università di Trento, I-38050 Mesiano di Povo (TN), Italy
2 Dipartimento di Elettronica e Informatica dell'Università, I-35131 Padova, Italy
3 Telettra SpA, Via Trento 30, I-20059 Vimercate (MI), Italy
4 Departimento di Elettronica ed Elettrotecnica dell'Università, I-70125 Bari, Italy
5 Dept. EECS, University of California at San Diego, La Jolla, CA 92093, U.S.A.
Abstract
GaAs MESFET's with non-alloyed ohmic contacts have been achieved through a solid phase reaction of the Ge/Pd/GaAs(xtl) structure upon annealing at 325°C for 30 min. Different Au-based overlayers over Ge/Pd have been tested for device applications and compared with a conventional AuGeNi contact. The thermal stability of the contact resistivity has been evaluated through long-term storages at 300°C.