| Issue |
J. Phys. Colloques
Volume 47, Number C2, Mars 1986
32 nd International Field Emission Symposium / 32ème Symposium International d'Emission de Champ
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|---|---|---|
| Page(s) | C2-167 - C2-167 | |
| DOI | https://doi.org/10.1051/jphyscol:1986224 | |
32 nd International Field Emission Symposium / 32ème Symposium International d'Emission de Champ
J. Phys. Colloques 47 (1986) C2-167-C2-167
DOI: 10.1051/jphyscol:1986224
AEP and NRRFSS, Cornell University, Knight Laboratory, Ithaca, NY 14853, U.S.A.
J. Phys. Colloques 47 (1986) C2-167-C2-167
DOI: 10.1051/jphyscol:1986224
MECHANICAL AND ELECTRONIC ASPECTS OF A FIELD ION SOURCE FOR BEAM APPLICATIONS
P.R. SCHWOEBEL et G.R. HANSONAEP and NRRFSS, Cornell University, Knight Laboratory, Ithaca, NY 14853, U.S.A.
Abstract
Temperature control from 5.0 to 3000K and high voltage constraints of a field ion source are discussed. Electronics for emitter annealing and for thermal field prosessing in addition to drawings and operational aspects of a 1 liter cryostat source assembly operating at 40 to 50 kV are presented. Practical constraints such as alignment, emitter replacement, operating temperature ranges, etc. will be presented. Supported by NSF under NRRFS grant ECS-8200312