| Issue |
J. Phys. Colloques
Volume 42, Number C7, Octobre 1981
Third International Conference on Hot Carriers in Semiconductors
|
|
|---|---|---|
| Page(s) | C7-63 - C7-69 | |
| DOI | https://doi.org/10.1051/jphyscol:1981707 | |
Third International Conference on Hot Carriers in Semiconductors
J. Phys. Colloques 42 (1981) C7-63-C7-69
DOI: 10.1051/jphyscol:1981707
1 Coordinated Science Laboratory and Department of Electrical Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois, U.S.A. 61 801
2 U.S. Army Electronics Technology and Device Laboratory, Ft. Monmouth, New Jersey U.S.A. 07703
J. Phys. Colloques 42 (1981) C7-63-C7-69
DOI: 10.1051/jphyscol:1981707
BAND-STRUCTURE DEPENDENT IMPACT IONIZATION IN SILICON AND GALLIUM ARSENIDE
J.Y. Tang1, H. Shichijo1, K. Hess1 et G.J. Iafrate21 Coordinated Science Laboratory and Department of Electrical Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois, U.S.A. 61 801
2 U.S. Army Electronics Technology and Device Laboratory, Ft. Monmouth, New Jersey U.S.A. 07703
Résumé
Nous avons développé une simulation par la méthode de Monte Carlo pour du silicium et de l'AsGa en incluant une structure de bande réaliste. Les taux d'ionisation par impact et les vitesses de dérive en régime continu sous forts champs électriques (>100 kV/cm) ont été calculés à différentes températures.
Abstract
We have performed a Monte Carlo simulation for GaAs and Si with the realistic band structure included. Steady state impact ionization rates and drift velocities under high electric fields (> 100 kV/cm) were calculated at various temperatures.