| Issue |
J. Phys. Colloques
Volume 42, Number C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-413 - C4-422 | |
| DOI | https://doi.org/10.1051/jphyscol:1981489 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-413-C4-422
DOI: 10.1051/jphyscol:1981489
RCA Laboratories, Princeton, NJ, 08540, U. S. A.
J. Phys. Colloques 42 (1981) C4-413-C4-422
DOI: 10.1051/jphyscol:1981489
ELECTRONIC PROPERTIES OF a-Si : H FROM MEASUREMENTS ON DEVICES
R.S. CrandallRCA Laboratories, Princeton, NJ, 08540, U. S. A.
Abstract
Some of the parameters that can be determined from both dc and transient current measurements on solar cell devices constructed from hydrogenated amorphous silicon (a-Si : H) will be reviewed. This will include using the photocurrent to determine the absorption coefficient for weakly absorbing gap states ; determination of the sum of the electron and hole drift lengths from the field dependence of the photocurrent ; determination of the sum of the electron and hole mobilities from photocapacitance measurements ; determination of the electron drift mobility and density of gap states from transient current measurements.