| Issue |
J. Phys. Colloques
Volume 42, Number C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
|
|
|---|---|---|
| Page(s) | C4-403 - C4-406 | |
| DOI | https://doi.org/10.1051/jphyscol:1981487 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-403-C4-406
DOI: 10.1051/jphyscol:1981487
Department of Electrical Engineering, Gifu University, Naka-Monzencho, Kakamihara, Gifu, Japan 504
J. Phys. Colloques 42 (1981) C4-403-C4-406
DOI: 10.1051/jphyscol:1981487
EXISTENCE OF IRREVERSIBILITY IN STAEBLER-WRONSKI EFFECT AND FATIGUE EFFECT OF PHOTOLUMINESCENCE OF GDa-Si : H
S. Nitta, Y. Takahashi and M. NodaDepartment of Electrical Engineering, Gifu University, Naka-Monzencho, Kakamihara, Gifu, Japan 504
Abstract
It is shown that the process of two optically induced phenomena and their recovery by annealing are containing some irreversible change. These irreversibility is discussed using a model having interaction of inhomogeneity in GDa-Si : H and light induced defects.