| Numéro |
J. Phys. Colloques
Volume 50, Numéro C7, Octobre 1989
X-ray and Neutron Scattering from Surfaces and Thin FilmsProceedings of the International Conference on Surface and Thin Film studies using Glancing-Incidence X-ray and Neutron Scattering |
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|---|---|---|
| Page(s) | C7-129 - C7-144 | |
| DOI | https://doi.org/10.1051/jphyscol:1989712 | |
Proceedings of the International Conference on Surface and Thin Film studies using Glancing-Incidence X-ray and Neutron Scattering
J. Phys. Colloques 50 (1989) C7-129-C7-144
DOI: 10.1051/jphyscol:1989712
SURFACE MORPHOLOGY OF MECHANICALLY AND CHEMICALLY POLISHED SEMICONDUCTOR WAFERS
J. HARADA1 et N. KASHIWAGURA21 Department of Applied Physics, Nagoya University, Chikusa-ku, Nagoya 464, Japan
2 Department of Basic Sciences, School of Engineering, Gifu University, Yanagido, Gifu 501-11, Japan
Résumé
Un diffractomètre 4 cercles, couplé à un détecteur bidimensionnel, est utilisé pour mesurer les tiges de Bragg tronquées provenant d'une surface cristalline plane. On montre qu'en jouant sur le degré de planéité de la surface, on peut obtenir des renseignements intéressants sur les processus fondamentaux de la diffusion de rayons X par la surface. Ainsi, il est possible de caractériser par une méthode non destructive les surfaces de semiconducteurs qui sont préparées pour une utilisation industrielle.
Abstract
In the, x-ray measurement of crystal truncation rod (CTR) scattering from a flat crystal surface, the conventional symetric reflection geometry with the use of a 4-circle diffractometer is shown to be still effective. Some advantages of using an imaging plate for the observation of x-ray CTR scattering are also presented. Several fundamental aspects of x-ray CTR scattering are demonstrated using several Si wafer surfaces with different degree of flatness. It is possible to characterize, by non-destructive methods, semiconductor surfaces which are treated for industrial use.