| Issue |
J. Phys. Colloques
Volume 42, Number C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|
|---|---|---|
| Page(s) | C4-349 - C4-351 | |
| DOI | https://doi.org/10.1051/jphyscol:1981474 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-349-C4-351
DOI: 10.1051/jphyscol:1981474
1 Shanghai Institute of Technical Physics, Academia Sinica, Shanghai, China
2 Max-Planck-Institut für Festkörperforschung, 7000 Stuttgart 80, F.R.G.
J. Phys. Colloques 42 (1981) C4-349-C4-351
DOI: 10.1051/jphyscol:1981474
INFRARED AND FAR INFRARED ABSORPTION OF B- AND P-DOPED AMORPHOUS Si
S.C. Shen1 and M. Cardona21 Shanghai Institute of Technical Physics, Academia Sinica, Shanghai, China
2 Max-Planck-Institut für Festkörperforschung, 7000 Stuttgart 80, F.R.G.
Abstract
The infrared and far infrared absorption spectra of B- and -[MATH]-doped a-Si(H) have been measured. The effect of annealing on these spectra has been studied. Three local modes of the B-H bond and a band of B-Si have been identified for the B-doped a-Si (H). The intrinsic infrared absorption of the Si-Si network is greatly enhanced by the presence of the dopants.