| Issue |
J. Phys. Colloques
Volume 42, Number C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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| Page(s) | C4-233 - C4-236 | |
| DOI | https://doi.org/10.1051/jphyscol:1981449 | |
J. Phys. Colloques 42 (1981) C4-233-C4-236
DOI: 10.1051/jphyscol:1981449
X-RAY DIFFRACTION STUDY OF ATOMIC STRUCTURE OF PLASMA DEPOSITED a-Si:H ALLOYS
K. Tsuji and S. MinomuraInstitute for Solid State Physics, University of Tokyo, Tokyo 106, Japan
Abstract
The atomic structure and defects have been studied by measurements of the x-ray diffraction, density, infrared spectra and optical absorption in a series of plasma-deposited a-Si : H alloys prepared by glow-discharge decomposition of silane (GD) and reactive sputtering of Si target (SP). The first peak of x-ray diffraction intensity shows the systematic changes in position and intensity with increasing H concentration CH. The first coordination number of Si atoms in GD a-Si : H decreases to 3.7±0.1 with increasing CH to 20 at.% while in SP a-Si : H it decreases more rapidly 3.3±0.1. The first coordination distance in these alloys remains unchanged. The systematic change in the structural data with CH are discussed in connection with bonding conformation and defects.