| Issue |
J. Phys. Colloques
Volume 42, Number C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-907 - C4-910 | |
| DOI | https://doi.org/10.1051/jphyscol:19814197 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-907-C4-910
DOI: 10.1051/jphyscol:19814197
1 Materials Science Department, S.C.K./C.E.N., B-2400 Mol, Belgium
2 Ryazan Radio Engineering Institute, Ryazan, U.R.S.S.
J. Phys. Colloques 42 (1981) C4-907-C4-910
DOI: 10.1051/jphyscol:19814197
DOPING OF CHALCOGENIDE GLASSES IN THE Ge-Se AND Ge-Te SYSTEMS
P. Nagels1, M. Rotti1 and S. Vikhrov21 Materials Science Department, S.C.K./C.E.N., B-2400 Mol, Belgium
2 Ryazan Radio Engineering Institute, Ryazan, U.R.S.S.
Abstract
The electronic transport properties of chalcogenide glasses of the type Ge-Se and Ge-Te to which foreign elements such as Bi, As, Cu and In are added, were investigated. Glasses of the (GeSe3.5)100-xBix system show a transition from p to n-type conduction at x ≈ 7 at. % Bi as evidenced by thermo-power measurements. The sign of the Hall coefficient is negative. This feature reveals the possibility of altering the density of charged dangling bonds by the incorporation of foreign additives. The conductivity of GeTe6 glasses is little affected by the addition of As, Cu and In. The thermopower is positive.