| Numéro |
J. Phys. Colloques
Volume 47, Numéro C8, Décembre 1986
EXAFS and Near Edge Structure IV
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|---|---|---|
| Page(s) | C8-399 - C8-402 | |
| DOI | https://doi.org/10.1051/jphyscol:1986879 | |
EXAFS and Near Edge Structure IV
J. Phys. Colloques 47 (1986) C8-399-C8-402
DOI: 10.1051/jphyscol:1986879
1 Department of Physical Chemistry, University of Cambridge, Lensfield Road, GB-Cambridge CB2 1EP, Great-Britain
2 A.T. Steel, Daresbury Laboratory, Daresbury, GB-Warrington WA4 4AD, Great-Britain
J. Phys. Colloques 47 (1986) C8-399-C8-402
DOI: 10.1051/jphyscol:1986879
AN EXAFS STUDY OF Bi DOPING IN CHALCOGENIDE GLASSES
S.R. ELLIOTT1 et A.T. STEEL21 Department of Physical Chemistry, University of Cambridge, Lensfield Road, GB-Cambridge CB2 1EP, Great-Britain
2 A.T. Steel, Daresbury Laboratory, Daresbury, GB-Warrington WA4 4AD, Great-Britain
Abstract
The role of Bi in causing a transition from p-type to n-type electrical behaviour in Ge chalcogenide glasses has been studied by EXAFS. It is found that the coordination number of the Bi is 3, independent of Bi content, but that the Debye-Waller factor increases by a factor of two at the p-n transition.