| Numéro |
J. Phys. Colloques
Volume 51, Numéro C1, Janvier 1990
Proceeding of the International CongressIntergranular and Interphase Boundaries in materials |
|
|---|---|---|
| Page(s) | C1-843 - C1-848 | |
| DOI | https://doi.org/10.1051/jphyscol:19901132 | |
DOI: 10.1051/jphyscol:19901132
COMPUTER SIMULATIONS OF THIN FILM GROWTH FOR HOMO AND HETERO EPITAXY
T. KANEKO et R. YAMAMOTODepartment of Materials Science, Faculty of Engineering, University of Tokyo, Tokyo 113, Japan
Abstract
We simulated a growth of metal films with two models of surface diffusion and investigated the relationships between the evolution of surface step densities and growth condition. In one case, we modeled thermally activated surface migration by the Arrhenius relation. When the substrate temperature was above 430K, clear periodic oscillations of the number of steps on the surface were observed. In the other case, epitaxial growth at 0K was simulated in which we modeled that deposited atoms can move by the hopping which use the kinetic energy of the atom. The step density can oscillate with one monolayer growth period when an impinged atom could hop more than 10 times in one direction even at 0K. In the random-hopping-migration model, when deposited atom can hop more than 28 times, the step density oscillation can be obtained.