| Numéro |
J. Phys. Colloques
Volume 50, Numéro C8, Novembre 1989
36th International Field Emission Symposium
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|---|---|---|
| Page(s) | C8-449 - C8-451 | |
| DOI | https://doi.org/10.1051/jphyscol:1989876 | |
J. Phys. Colloques 50 (1989) C8-449-C8-451
DOI: 10.1051/jphyscol:1989876
METAL-SEMICONDUCTOR (Si, GaAs) INTERFACES
H. KIM1, F. HASHIO1 et T. SAKURAI21 Department of Electrical Engineering, Nagasaki Institute of Applied Science, Abamachi, Nagasaki, Japan
2 The Institute for Solid State Physics, University of Tokyo, Minato-ku, Tokyo, Japan
Abstract
The FN plots for Si tips are classified into lines and curves depending on the thickness of the surface oxide film, but the FN plots for a GaAs tip shows only straight lines. A double peak structure in the energy distribution curve has been observed on the field desorbed surface at medium field after deposition of 1-2 ML of Al onto a Si surface. However, with increasing the amount of deposition of Al to 3 ML on the Si surface, the double peaks disappear completely. This result suggests that the surface layers are perfectly metallized even at room temperature. An oxide film, thinner than that on a Si surface, formed on the GaAs surface and the surface composite atoms of GaAs can easily be desorbed by field desorption. An intrinsic potential drop disappears suddenly at a certain field, that is, the surface region of the field desorbed tip is composed of metallic species.