| Numéro |
J. Phys. Colloques
Volume 47, Numéro C2, Mars 1986
32 nd International Field Emission Symposium / 32ème Symposium International d'Emission de Champ
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| Page(s) | C2-53 - C2-58 | |
| DOI | https://doi.org/10.1051/jphyscol:1986208 | |
32 nd International Field Emission Symposium / 32ème Symposium International d'Emission de Champ
J. Phys. Colloques 47 (1986) C2-53-C2-58
DOI: 10.1051/jphyscol:1986208
Louisiana State University, Department of Mechanical Engineering, Division of Material Science, Baton Rouge, Louisiana 70803, U.S.A.
J. Phys. Colloques 47 (1986) C2-53-C2-58
DOI: 10.1051/jphyscol:1986208
FIELD EMISSION MICROSCOPY OF GALLIUM ARSENIDE
C. PATELLouisiana State University, Department of Mechanical Engineering, Division of Material Science, Baton Rouge, Louisiana 70803, U.S.A.
Abstract
Field Emission technique has been applied to study the behaviour of thin overlayers of gold on GaAs. Using Fowler-Nordheim plots, change in the work function Φ, is examined for temperatures, T=77K and T=300K. Φ changes slightly for low doses of gold and significantly for larger ones [Φ = 4.3 - 3.7 eV]. Desorption of gold is also examined and the results indicate two different adsorbed states in Au-overlayers formed at room temperature. Finally, a brief description of sample preparation is also included.