Numéro
J. Phys. Colloques
Volume 50, Numéro C8, Novembre 1989
36th International Field Emission Symposium
Page(s) C8-381 - C8-385
DOI https://doi.org/10.1051/jphyscol:1989865
36th International Field Emission Symposium

J. Phys. Colloques 50 (1989) C8-381-C8-385

DOI: 10.1051/jphyscol:1989865

FIELD ION MICROSCOPY AND ATOM PROBE MICROANALYSIS OF VANADIUM

T.J. GODFREY, R.P. SETNA et G.D.W. SMITH

Department of Metallurgy and Science of Materials, University of Oxford, Parks Road, GB-Oxford OX1 3PH, Great-Britain


Abstract
FIM specimens of vanadium have been prepared by electropolishing in a mixture of methanol and concentrated sulphuric acid (6:1) at a voltage of 6.5 V (d.c.). Imaging in Ne-He mixtures at 40-55 K produced good quality micrographs. The evaporation field in the presence of neon was 40 V/nm. Oxidation of previously field evaporated specimens was carried out in air at 1 atmosphere and temperatures of 298,373 and 473 K. Atom probe analysis through the oxide films showed that the predominant oxide formed at all three temperatures was V2O3. There were indications that a transition layer (corresponding to the suboxide V9O) formed in the region between the main outer oxide film and the metallic substrate. In addition, the bulk metal (which was in the form of fine drawn, 0.1 mm dia. wire) contained approximately 1% oxygen. In one specimen, a high angle grain boundary was observed. This was decorated with brightly imaging impurity atoms. Atom probe analysis revealed enhanced concentrations of carbon and oxygen in the boundary region.