| Numéro |
J. Phys. Colloques
Volume 48, Numéro C9, Décembre 1987
X-Ray and Inner-Shell ProcessesVol. 1 |
|
|---|---|---|
| Page(s) | C9-961 - C9-964 | |
| DOI | https://doi.org/10.1051/jphyscol:19879173 | |
X-Ray and Inner-Shell Processes
Vol. 1
J. Phys. Colloques 48 (1987) C9-961-C9-964
DOI: 10.1051/jphyscol:19879173
1 Dipartimento di Fisica, Università "La Sapienza", 1-00185 Roma, Italy
2 INFN, Laboratori Nazionali di Frascati, CP 13, I-00044 Frascati, Italy
Vol. 1
J. Phys. Colloques 48 (1987) C9-961-C9-964
DOI: 10.1051/jphyscol:19879173
DOUBLE-ELECTRON EXCITATION AT THE Si K-EDGE OF AMORPHOUS SILICON
A. FILIPPONI1, F. EVANGELISTI1, E. BERNIERI2 and S. MOBILIO21 Dipartimento di Fisica, Università "La Sapienza", 1-00185 Roma, Italy
2 INFN, Laboratori Nazionali di Frascati, CP 13, I-00044 Frascati, Italy
Abstract
In this paper we report the experimental evidence of a double-electron excitation involving two deep core states in the X-ray absorption coefficient of a solid amorphous system. For the first time a fine structure (EXAFS) in a double-electron excitation cross section has been identified. Such feature has unambiguously allowed us to assign the dominant excitation channel to a (1s,2p) → (3p,epsilonp) shake-up transition.