| Numéro |
J. Phys. Colloques
Volume 48, Numéro C5, Novembre 1987
3rd International Conference on Modulated Semiconductor Structures
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|---|---|---|
| Page(s) | C5-131 - C5-134 | |
| DOI | https://doi.org/10.1051/jphyscol:1987524 | |
3rd International Conference on Modulated Semiconductor Structures
J. Phys. Colloques 48 (1987) C5-131-C5-134
DOI: 10.1051/jphyscol:1987524
Institute of Semiconductors, Academia Sinica, P.O. Box 912, Beijing, China
J. Phys. Colloques 48 (1987) C5-131-C5-134
DOI: 10.1051/jphyscol:1987524
THE TEMPERATURE CHARACTERISTICS OF THE PHOTOLUMINESCENCE FROM GaAs-GaAlAs MULTIPLE QUANTUM WELL STRUCTURES
W.K. GE, Z.Y. XU, Y. YAN, J.Z. ZU, Z.B. ZHENG et D.Z. SUNInstitute of Semiconductors, Academia Sinica, P.O. Box 912, Beijing, China
Abstract
The temperature behavior of the photoluminescence from GaAs-GaAlAs multiple quantum well structures indicates that the maintaining of the excitonic properties of the luminescence at higher temperature is a good assessment of the material quality, and the temperature dependence of the luminescence intensity ratio from the intentionally arranged wide and narrow wells is discussed by the vertical transport process of the photoexcited electrons.