| Numéro |
J. Phys. Colloques
Volume 46, Numéro C10, Décembre 1985
Eighth International Conference on Internal Friction and Ultrasonic Attenuation in Solids
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|---|---|---|
| Page(s) | C10-541 - C10-544 | |
| DOI | https://doi.org/10.1051/jphyscol:198510120 | |
Eighth International Conference on Internal Friction and Ultrasonic Attenuation in Solids
J. Phys. Colloques 46 (1985) C10-541-C10-544
DOI: 10.1051/jphyscol:198510120
1 Coordinated Science Laboratory, Univ. of Illinois and Electronic Decisions Inc., Urbana, IL 61801.
2 Dept. of Physics and Materials Research Laboratory, University of Illinois, Urbana, Il. 61801, U.S.A.
J. Phys. Colloques 46 (1985) C10-541-C10-544
DOI: 10.1051/jphyscol:198510120
SURFACE ACOUSTIC WAVE STUDIES OF DEFECTS IN ELECTRON IRRADIATED GaAs
M.J. BROPHY1 and A.V. GRANATO21 Coordinated Science Laboratory, Univ. of Illinois and Electronic Decisions Inc., Urbana, IL 61801.
2 Dept. of Physics and Materials Research Laboratory, University of Illinois, Urbana, Il. 61801, U.S.A.
Abstract
Surface Acoustic Waves (SAW) provide a means of studying low temperature anelastic relaxations of crystal defects produced by irradiation. Due to their confinement near the surface where radiation induced defect concentrations are highest. SAW are more sensitive than bulk ultrasonic waves in these investigations. Furthermore, for piezoelectric materials, the use of photolithographically deposited interdigital SAW transducers eliminates the ubiquitous ultrasonic bond problem faced in bulk wave experiments, facilitating annealing studies. Results are reported for 2.5 MeV electron irradiated GaAs. Two peaks in attenuation versus temperature were observed both with SAW and with bulk waves.