| Numéro |
J. Phys. Colloques
Volume 46, Numéro C10, Décembre 1985
Eighth International Conference on Internal Friction and Ultrasonic Attenuation in Solids
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|---|---|---|
| Page(s) | C10-537 - C10-540 | |
| DOI | https://doi.org/10.1051/jphyscol:198510119 | |
Eighth International Conference on Internal Friction and Ultrasonic Attenuation in Solids
J. Phys. Colloques 46 (1985) C10-537-C10-540
DOI: 10.1051/jphyscol:198510119
Department of Physics and Materials Research Laboratory, University of Illinois at Urbana - Champaign, Urbana , Illinois 61801, U.S.A.
J. Phys. Colloques 46 (1985) C10-537-C10-540
DOI: 10.1051/jphyscol:198510119
ULTRASONIC DETECTION OF THE VACANCY IN BORON-DOPED SILICON
W.L. JOHNSON and A.V. GRANATODepartment of Physics and Materials Research Laboratory, University of Illinois at Urbana - Champaign, Urbana , Illinois 61801, U.S.A.
Abstract
Ultrasonic attenuation and velocity measurements at 15.4 and 75.0 MHz were performed on electron-irradiated boron-doped silicon. A defect relaxation was observed which, from comparison with EPR data, is identified as the positively charged vacancy.