| Numéro |
J. Phys. Colloques
Volume 42, Numéro C6, Décembre 1981
International Conference on Phonon Physics
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|---|---|---|
| Page(s) | C6-640 - C6-642 | |
| DOI | https://doi.org/10.1051/jphyscol:19816186 | |
International Conference on Phonon Physics
J. Phys. Colloques 42 (1981) C6-640-C6-642
DOI: 10.1051/jphyscol:19816186
Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, 7000 Stuttgart 80, F.R.G.
J. Phys. Colloques 42 (1981) C6-640-C6-642
DOI: 10.1051/jphyscol:19816186
VIBRATIONAL PROPERTIES OF VACANCIES IN HOMOPOLAR SEMICONDUCTORS
K. Suzuki, D. Schmeltzer et A.A. MaradudinMax-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, 7000 Stuttgart 80, F.R.G.
Abstract
Spectral densities of phonons in the immediate vicinity of a vacancy in Si and Ge are calculated in the continued fraction/recursion method. The results indicate that both in Si and Ge the presence of vacancy gives rise to a sharp decrease in the DOS in the optical frequency range and a rather diffuse increase in the acoustic frequency range.