| Numéro |
J. Phys. Colloques
Volume 50, Numéro C6, Juin 1989
Beam Injection Assessment of Defects in SemiconductorsInternational Workshop |
|
|---|---|---|
| Page(s) | C6-165 - C6-165 | |
| DOI | https://doi.org/10.1051/jphyscol:1989622 | |
Beam Injection Assessment of Defects in Semiconductors
International Workshop
J. Phys. Colloques 50 (1989) C6-165-C6-165
DOI: 10.1051/jphyscol:1989622
Laboratoire de Structure et Propriétés de l'Etat Solide, Bât. C6, USTLFA, F-59655 Villeneuve d'Ascq Cedex, France
International Workshop
J. Phys. Colloques 50 (1989) C6-165-C6-165
DOI: 10.1051/jphyscol:1989622
RECOMBINATION AT DISLOCATION LEVELS LOCATED IN THE SPACE CHARGE REGION. EBIC CONTRAST EXPERIMENTS AND THEORY
J.L. FARVACQUE et B. SIEBERLaboratoire de Structure et Propriétés de l'Etat Solide, Bât. C6, USTLFA, F-59655 Villeneuve d'Ascq Cedex, France
Abstract
Recombination at dislocations located in the space charge region (SCR) of a Schottky diode has been previously evidenced by EBIC contrats experiments [1] in the case of non intentionally n type CdTe. A depth-dependent recombination probability was, then, phenomenologically ascribed to the dislocation, in order to fit theoretical EBIC curves as a function of the beam accelerating voltage Eo obtained for dislocations perpendicular to the surface, with experimental ones. A variable radius ε(z) was assigned to the recombination cylinder which described the dislocation and within which the recombination efficiency was taken equal to 100% [2] .