| Numéro |
J. Phys. Colloques
Volume 50, Numéro C6, Juin 1989
Beam Injection Assessment of Defects in SemiconductorsInternational Workshop |
|
|---|---|---|
| Page(s) | C6-158 - C6-158 | |
| DOI | https://doi.org/10.1051/jphyscol:1989618 | |
Beam Injection Assessment of Defects in Semiconductors
International Workshop
J. Phys. Colloques 50 (1989) C6-158-C6-158
DOI: 10.1051/jphyscol:1989618
Laboratoire d'Etudes et de Recherches sur les Matériaux, ISMRa-Université, Boulevard du Maréchal Juin, F-14032 Caen Cedex, France
International Workshop
J. Phys. Colloques 50 (1989) C6-158-C6-158
DOI: 10.1051/jphyscol:1989618
EBIC MEASUREMENTS ON LOW ANGLE GRAIN BOUNDARIES
A. BARY et G. NOUETLaboratoire d'Etudes et de Recherches sur les Matériaux, ISMRa-Université, Boulevard du Maréchal Juin, F-14032 Caen Cedex, France
Abstract
The largest grains in Polix ingots contain several low-angle grain boundaries. The electrical properties of high angle grain boundaries have extensively been studied by EBIC/TEM techniques (1) but comparatively less attention has been paid to those of low-angle grain boundaries. However for Polix materials, in the regions of large grains, the total length of low-angle grain boundaries can be much greater than that of high-angle grain boundaries. Moreover, in general the low-angle grain boundaries exhibit strong EBIC contrasts suggesting that their electrical activity is at least of the same order of magnitude than the electrical activity of high-angle grain boundaries.