| Numéro |
J. Phys. Colloques
Volume 49, Numéro C4, Septembre 1988
ESSDERC 8818th European Solid State Device Research Conference |
|
|---|---|---|
| Page(s) | C4-79 - C4-82 | |
| DOI | https://doi.org/10.1051/jphyscol:1988416 | |
ESSDERC 88
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-79-C4-82
DOI: 10.1051/jphyscol:1988416
Microelectronics Center, Nanjing Institute of Technology, Nanjing 210018, China
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-79-C4-82
DOI: 10.1051/jphyscol:1988416
COOL PLASMA ACTIVATED SURFACE IN SILICON WAFER DIRECT BONDING TECHNOLOGY
G.-L. SUN, J. ZHAN, Q.-Y. TONG, S.-J. XIE, Y.-M. CAI et S.-J. LUMicroelectronics Center, Nanjing Institute of Technology, Nanjing 210018, China
Abstract
A novel cool plasma surface activation method has been developed for high quality SOI/SDB (Silicon wafer Direct Bonding) preparation. The activation effectiveness of different plasma gases, espetially of O2 plsma gases were investigated. The measurements of H.V-PMOS and L.V.-NMOS devices made on the SOI/SDB and on a bulk Silicon indicate that ratios of electron and hole mobility of SOI to those of bulk Silicon are 0.92 and 0.88, respectively. It was proved that our SOI substrate produced by SDB is of device level quality.