NON-DESTRUCTIVE CHARACTERISATION OF DEVICE PROCESSING OF SILICON-ON-SAPPHIRE (SOS) WAFERS

C. PICKERING; S. SHARMA; S. COLLINS; A.G. MORPETH; G.R. TERRY; A.M. HODGE

doi:doi:10.1051/jphyscol:1988410

Numéro		J. Phys. Colloques Volume 49, Numéro C4, Septembre 1988 ESSDERC 88 18th European Solid State Device Research Conference


Page(s)		C4-55 - C4-58
DOI		https://doi.org/10.1051/jphyscol:1988410

ESSDERC 88
18th European Solid State Device Research Conference

J. Phys. Colloques 49 (1988) C4-55-C4-58
DOI: 10.1051/jphyscol:1988410

NON-DESTRUCTIVE CHARACTERISATION OF DEVICE PROCESSING OF SILICON-ON-SAPPHIRE (SOS) WAFERS

C. PICKERING, S. SHARMA, S. COLLINS, A.G. MORPETH, G.R. TERRY et A.M. HODGE

Royal Signals and Radar Establishment, St Andrews Road, Malvern, GB-Worcs WR14 3PS, Great-Britain

Abstract
Spectrosopic ellipsometry has been used to obtain microstructural and layer thickness information from processed SOS wafers consisting of poly-Si/gate oxide/epi- Si/sapphire structures. Oxide thickness and interface roughness increased for 0.1 µm SOS wafers. Poly-Si formed by annealing α-Si deposited layers had the best dielectric function and similar structure and thicknesses were obtained on bulk and SOS wafers.