| Numéro |
J. Phys. Colloques
Volume 48, Numéro C5, Novembre 1987
3rd International Conference on Modulated Semiconductor Structures
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|---|---|---|
| Page(s) | C5-479 - C5-482 | |
| DOI | https://doi.org/10.1051/jphyscol:19875101 | |
3rd International Conference on Modulated Semiconductor Structures
J. Phys. Colloques 48 (1987) C5-479-C5-482
DOI: 10.1051/jphyscol:19875101
1 Institut für Experimentalphysik, Universität Innsbruck, Technikerstrasse 25, A-6020 Innsbruck, Austria
2 Forschungsinstitut der Deutschen Bundespost, Am Kavalleriesand 3, D-6000 Darmstadt, F.R.G.
3 Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-7000 Stuttgard 80, F.R.G.
J. Phys. Colloques 48 (1987) C5-479-C5-482
DOI: 10.1051/jphyscol:19875101
TUNNELING FROM QUASI 2D ELECTRONIC STATES INTO CONTINUUM- AND BOUND STATES IN GaAs/GaAlAs-HETEROSTRUCTURES
J. SMOLINER1, R. LASSNIG1, E. GORNIK1, G. WEIMANN2 et K. PLOOG31 Institut für Experimentalphysik, Universität Innsbruck, Technikerstrasse 25, A-6020 Innsbruck, Austria
2 Forschungsinstitut der Deutschen Bundespost, Am Kavalleriesand 3, D-6000 Darmstadt, F.R.G.
3 Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-7000 Stuttgard 80, F.R.G.
Abstract
Oscillatory structure is observed in forward biased dI/dV and d2I/dV2 curves of conventional GaAs/GaAlAs high electron mobility transistor samples at liquid helium temperature using modulation techniques. These oscillations can be explained by Fowler-Nordheim tunneling. From the position of the oscillations the conduction band discontinuity is determined as a function of the aluminum concentration x. For samples having an aluminum concentration between 0.3 and 0.4 a value of ΔEg/ΔEg = 0.61 is found. Further the depth of the deep donor levels in the GaAlAs was determined to be 130 meV below the conduction band. In most recent experiments tunneling between subbands in the GaAs and GaAlAs is observed