| Numéro |
J. Phys. Colloques
Volume 48, Numéro C5, Novembre 1987
3rd International Conference on Modulated Semiconductor Structures
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|---|---|---|
| Page(s) | C5-483 - C5-486 | |
| DOI | https://doi.org/10.1051/jphyscol:19875102 | |
3rd International Conference on Modulated Semiconductor Structures
J. Phys. Colloques 48 (1987) C5-483-C5-486
DOI: 10.1051/jphyscol:19875102
1 Physics Dept., University of St Andrews, GB-St Andrews, KY16 9SS, Fife, Great-Britain
2 Physics Dept., University of St Andrews, GB-St' Andrews, KY16 9SS, Fife, Great-Britain
3 Physics Dept., University of Edinburgh, GB-Edinburgh, EH9 3JZ, Great-Britain
4 Electronics and Electrical Engineering Dept., University of Sheffield, GB-Sheffield, S1 3JD, Great-Britain
J. Phys. Colloques 48 (1987) C5-483-C5-486
DOI: 10.1051/jphyscol:19875102
RAMAN SCATTERING IN MBE GaInAs-InP QUANTUM WELLS
M. WATT1, C.M. SOTOMAYOR TORRES2, P.D. HATTON3, H. VASS3, P.A. CLAXTON4 et J.S. ROBERTS41 Physics Dept., University of St Andrews, GB-St Andrews, KY16 9SS, Fife, Great-Britain
2 Physics Dept., University of St Andrews, GB-St' Andrews, KY16 9SS, Fife, Great-Britain
3 Physics Dept., University of Edinburgh, GB-Edinburgh, EH9 3JZ, Great-Britain
4 Electronics and Electrical Engineering Dept., University of Sheffield, GB-Sheffield, S1 3JD, Great-Britain
Abstract
The phonon modes in GaInAs-InP heterostructures were studied by means of Raman scattering. The mode frequencies were found to occur at the bulk values and to be well-defined even for layers of 25A. The phonon intensity ratios were found to depend very strongly on the incident laser power and we attribute this to screening of the modes by photoexcited carriers.