| Numéro |
J. Phys. Colloques
Volume 48, Numéro C5, Novembre 1987
3rd International Conference on Modulated Semiconductor Structures
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| Page(s) | C5-45 - C5-49 | |
| DOI | https://doi.org/10.1051/jphyscol:1987507 | |
J. Phys. Colloques 48 (1987) C5-45-C5-49
DOI: 10.1051/jphyscol:1987507
PHOTOEMISSION STUDY OF ALLOYS AND HETEROSTRUCTURES OF III-V COMPOUND SEMICONDUCTORS
H. OKUMURA1, I. YOSHIDA2, E. MUNEYAMA3, S. MISAWA1, K. ENDO1 et R. YOSHIDA11 Electrotechnical Laboratory 1-1-4, Umezono, Sakura-mura, Niihari-gun, Ibaraki 305, Japan
2 Sanyo Tsukuba Research Center
3 UBE Scientific Analysis Laboratory
Abstract
The electronic structures of MBE-grown AlAs:GaAs, AlSb:GaSb and GaSb:GaAs compound semiconductor alloys and heterostructures were investigated by in-situ photoemission measurements. It was found that the binding energies of inner core levels for the alloys do not change with the compositions within ± 0.1eV, and correspond with those of the heterostructures. AlGaAs and AlGaSb alloys show some changes of valence bands in accordance with the compositions, while the variation of GaAsSb alloy is not monotonous. For AlAs-GaAs heterostructures, the minimum layer thickness necessary to show the bulk-like band structure was estimated to be 5-6 monolayers. The valence band offsets of AlAs-GaAs, AlSb-GaSb and GaSb-GaAs heterostructures were estimated to be 0.12, 0.19 and 0.35eV, respectively.