THEORY OF ONE- AND TWO-PHONON DEFORMATION POTENTIALS IN SEMICONDUCTORS

P. Kocevar; K. Baumann; P. Vogl; W. Pötz

doi:doi:10.1051/jphyscol:1981753

Numéro		J. Phys. Colloques Volume 42, Numéro C7, Octobre 1981 Third International Conference on Hot Carriers in Semiconductors


Page(s)		C7-431 - C7-436
DOI		https://doi.org/10.1051/jphyscol:1981753

Third International Conference on Hot Carriers in Semiconductors

J. Phys. Colloques 42 (1981) C7-431-C7-436
DOI: 10.1051/jphyscol:1981753

THEORY OF ONE- AND TWO-PHONON DEFORMATION POTENTIALS IN SEMICONDUCTORS

P. Kocevar, K. Baumann, P. Vogl et W. Pötz

Institut für Theoretische Physik, Universität Graz, A-8010 Graz, Austria

Abstract
A theory of deformation potentials for charge carriers in tetrahedral semiconductors is presented. The model is based on an LCAO-formulation and is able to predict optical one-phonon deformation potentials for 36 materials and intravalley two-phonon deformation potentials in Ge,Si and III-V compounds. The comparison with the known experimental deformation potentials shows very good agreement between theory and experiment.