| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-159 - C4-162 | |
| DOI | https://doi.org/10.1051/jphyscol:1981432 | |
J. Phys. Colloques 42 (1981) C4-159-C4-162
DOI: 10.1051/jphyscol:1981432
TRANSPORT PROPERTIES OF AMORPHOUS As2Se3
A.C. Sharp, J.M. Marshall and H.S. FortunaDepartment of Physics, Dundee College of Technology, Dundee DD1 1HG, Scotland, U. K.
Abstract
Measurements of the mobility and degree of transit pulse dispersion as a function of temperature between 190K and 360K are reported for films of As2Se3 prepared by quenching from the melt, r.f. sputtering, and thermal evaporation. The dispersion parameter α exhibits a marked temperature dependence for vitreous films. An analysis of α indicates that the mobility-controlling traps are distributed over an energy range of about 0.07eV. The d.c. electrical conductivity of the specimens has also been measured over the same temperature range, and a computer analysis of the data suggests the existence of more than one exponential component. These results are interpreted via a model in which the hole carriers interact with three distinct sets of traps centred on energies 0.3, 0.4 and 0.6eV above the valence band mobility edge.