| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-155 - C4-158 | |
| DOI | https://doi.org/10.1051/jphyscol:1981431 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-155-C4-158
DOI: 10.1051/jphyscol:1981431
Corporate Research Laboratory, Exxon Research and Engineering Co., Linden, NJ 07036, U.S.A.
J. Phys. Colloques 42 (1981) C4-155-C4-158
DOI: 10.1051/jphyscol:1981431
TEMPERATURE DEPENDENCE OF THE ELECTRON DRIFT MOBILITY IN HYDROGENATED a-Si PREPARED BY SPUTTERING
T. Tiedje, T.D. Moustakas and J.M. CebulkaCorporate Research Laboratory, Exxon Research and Engineering Co., Linden, NJ 07036, U.S.A.
Abstract
The temperature dependence of the electron drift mobility and its dispersion have been measured in sputtered a-SiHx films with different H contents. The data are consistent with the multiple trapping model of dispersive transport and demonstrate that the electron transport is insensitive to H content in the 14-19.5% range.