| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-667 - C4-669 | |
| DOI | https://doi.org/10.1051/jphyscol:19814147 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-667-C4-669
DOI: 10.1051/jphyscol:19814147
1 Laboratoire de Physique du Solide, Energie Solaire, CNRS-Valbonne, B.P. n° 1, Sophia Antipolis, 06560 Valbonne, France
2 CNRS-Bellevue, 1, place Aristide Briand, 92190 Meudon, France
3 Laboratoire Louis Néel, CNRS-Grenoble, 38042 Grenoble Cedex, France
J. Phys. Colloques 42 (1981) C4-667-C4-669
DOI: 10.1051/jphyscol:19814147
NEW AMORPHOUS ALLOY SEMICONDUCTORS : a-Si1-xSnx
C. Vérié1, 2, J.F. Rochette1, 2 and J.P. Rebouillat31 Laboratoire de Physique du Solide, Energie Solaire, CNRS-Valbonne, B.P. n° 1, Sophia Antipolis, 06560 Valbonne, France
2 CNRS-Bellevue, 1, place Aristide Briand, 92190 Meudon, France
3 Laboratoire Louis Néel, CNRS-Grenoble, 38042 Grenoble Cedex, France
Abstract
New amorphous Si1-xSnx alloys have been prepared using a dc cathodic sputtering technic for 0 < x < 0.12. Routine characterization measurements were performed, leading to establish for the first time the existence of these new amorphous semiconductors. Both the average and optical gaps decrease with increasing Sn content, with the latter extrapolating to 0 at x ~ 0.5. The high sensibility of a-Si electronic structure to Sn substitution is discussed in the framework of the tight binding approach, stressing the importance of the atomic relativiste corrections.