Le Journal de Physique Colloques

Vol. 50 No. C6 (Juin 1989)

Beam Injection Assessment of Defects in Semiconductors
International Workshop

• SEM MICROCHARACTERIZATION OF SEMICONDUCTORS BY EBIC AND CL     p. C6-3
  D.B. HOLT
  Abstract | PDF file (3.760 MB)



• ELECTRON AND PHOTON - MATTER INTERACTION : ENERGY DISSIPATION AND INJECTION LEVEL     p. C6-15
  E. NAPCHAN
  Abstract | PDF file (830.3 KB)



• MINORITY-CARRIER DIFFUSION LENGTH : MEASUREMENTS BY EBIC, CONNECTION TO MATERIALS MICROSTRUCTURE AND RELATION TO DEVICE PERFORMANCE     p. C6-31
  M. KITTLER and W. SEIFERT
  Abstract | PDF file (1.852 MB)



• INTRINSIC OR EXTRINSIC ORIGIN OF THE RECOMBINATION AT EXTENDED DEFECTS     p. C6-47
  B. SIEBER
  Abstract | PDF file (626.6 KB)



• MODELING THE EBIC MEASUREMENTS OF DIFFUSION LENGTHS AND THE RECOMBINATION CONTRAST AT EXTENDED DEFECTS     p. C6-57
  C. DONOLATO
  Abstract | PDF file (347.4 KB)



• PERFORMANCE AND APPLICATIONS OF A STEM-CATHODOLUMINESCENCE SYSTEM     p. C6-65
  J.W. STEEDS
  Abstract | PDF file (1.375 MB)



• CATHODOLUMINESCENCE IN DOUBLE HETEROJUNCTION LASERS     p. C6-73
  P. HENOC, B. AKAMATSU and R.B. MARTINS
  Abstract | PDF file (539.2 KB)



• LATERAL MAPPING OF ATOMIC SCALE INTERFACE MORPHOLOGY AND DISLOCATIONS IN QUANTUM WELLS BY CATHODOLUMINESCENCE IMAGING     p. C6-85
  J. CHRISTEN and D. BIMBERG
  Abstract | PDF file (2.210 MB)



• SCANNING-DLTS     p. C6-101
  O. BREITENSTEIN
  Abstract | PDF file (1.281 MB)



• LBIC QUANTITATIVE MAPPING     p. C6-111
  J.P. BOYEAUX and A. LAUGIER
  Abstract | PDF file (1.699 MB)



• ELECTRON AND OPTICAL BEAM TESTING OF INTEGRATED CIRCUITS     p. C6-129
  J.-P. COLLIN
  Abstract | PDF file (2.038 MB)



• PROBLEMS ASSOCIATED WITH MODELLING OF RECOMBINATION AT DEFECTS, TEMPERATURE DEPENDENCE OF EBIC AND CL     p. C6-145
  A. JAKUBOWICZ
  Abstract | PDF file (3.205 MB)



• HIGH SPATIAL RESOLUTION ELECTRON BEAM INDUCED CURRENT     p. C6-153
  J.-L. MAURICE
  Abstract | PDF file (53.50 KB)



• ELECTRICAL ACTIVITY OF GRAIN BOUNDARIES IN SILICON BY THE S.T.E.B.I.C. METHOD     p. C6-154
  C. CABANEL and J.-Y. LAVAL
  Abstract | PDF file (516.9 KB)



• PHOTOCAPACITY STUDY OF GRAIN BOUNDARY RECOMBINATION IN SILICON     p. C6-155
  A. BRONIATOWSKI and D. BERNARD
  Abstract | PDF file (62.66 KB)



• SEM/EBIC STUDY OF ELECTRICAL PROPERTIES IN BULK AND AT GRAIN BOUNDARIES IN Sb-DOPED GERMANIUM     p. C6-156
  N. TABET and C. MONTY
  Abstract | PDF file (37.19 KB)



• EBIC MEASUREMENTS OF ANNEALED SILICON BICRYSTALS     p. C6-157
  A. IHLAL and G. NOUET
  Abstract | PDF file (60.51 KB)



• EBIC MEASUREMENTS ON LOW ANGLE GRAIN BOUNDARIES     p. C6-158
  A. BARY and G. NOUET
  Abstract | PDF file (57 KB)



• EXTRINSIC ORIGINE OF RECOMBINATION CENTRES AT GRAIN BOUNDARIES IN P TYPE SILICON BICRYSTALS     p. C6-159
  M. PASQUINELLI, N. M'GAFFAD, H. AMANRICH, L. AMMOR and S. MARTINUZZI
  Abstract | PDF file (42.31 KB)



• EVOLUTIONS OF GRAIN BOUNDARY RECOMBINATION ACTIVITY IN POLYCRYSTALLINE SILICON INVESTIGATED BY LBIC MAPPING AND DLTS     p. C6-160
  M. PASQUINELLI, N. M'GAFFAD, H. AMANRICH and S. MARTINUZZI
  Abstract | PDF file (36.43 KB)



• LBIC ANALYSIS FOR GRAIN-BOUNDARY CHARACTERIZATION IN INHOMOGENEOUS MATERIALS     p. C6-161
  H. EL GHITANI
  Abstract | PDF file (36.57 KB)



• RECOMBINATION AT DISLOCATION LEVELS LOCATED IN THE SPACE CHARGE REGION. EBIC CONTRAST EXPERIMENTS AND THEORY     p. C6-165
  J.L. FARVACQUE and B. SIEBER
  Abstract | PDF file (47.66 KB)



• IN SITU OBSERVATION OF DISLOCATION MOTION IN CdTe USING EBIC     p. C6-166
  J. KRONEWITZ and W. SCHRÖTER
  Abstract | PDF file (30.40 KB)



• RECONSTRUCTION OF THE DEFECT GEOMETRY BY SIMULTANEOUS EBIC/CL MEASUREMENTS ; THEORY AND EXPERIMENTAL RESULTS     p. C6-167
  A. JAKUBOWICZ, M. BODE and H.-U. HABERMEIER
  Abstract | PDF file (30.11 KB)



• TEMPERATURE DEPENDENCE OF CL AND EBIC IMAGES OF DISLOCATED GaAs AND Si     p. C6-168
  T. SEKIGUCHI, Y. MIYAMURA and K. SUMINO
  Abstract | PDF file (51.11 KB)



• LIGHT BEAM INDUCED CURRENT IMAGING OF THE ELECTRICAL ACTIVITY OF STACKING FAULTS IN CZ SILICON     p. C6-169
  A. CASTALDINI, A. CAVALLINI, A. POGGI and E. SUSI
  Abstract | PDF file (70.22 KB)



• INTERNAL MEASUREMENTS FOR FAILURE ANALYSIS AND CHIP VERIFICATION OF VLSI CIRCUITS     p. C6-173
  J. KÖLZER and J. OTTO
  Abstract | PDF file (65.32 KB)



• DETERMINATION OF ELECTRON BEAM CHARGING CONDITIONS OF OXIDES AT LOW ENERGY IN THE LOW DOSE RANGE     p. C6-174
  M. VALENZA, P. GIRARD and B. PISTOULET
  Abstract | PDF file (43.28 KB)



• SCANNING ISOTHERMAL CURRENT TRANSIENT SPECTROSCOPY (SICTS) FOR DEEP LEVEL CHARACTERIZATION     p. C6-175
  Y. TOKUMARU, H. OKUSHI and H. NAKA
  Abstract | PDF file (38.54 KB)



• HOLE-DIFFUSION LENGTH AND TRANSPORT PARAMETERS OF THIN CDS FILMS FROM A SCHOTTKY BARRIER     p. C6-176
  J. EBOTHE
  Abstract | PDF file (35.88 KB)



• THICKNESS DEPENDENCE OF CATHODOLUMINESCENCE IN THIN FILMS     p. C6-177
  J. YUAN, S. BERGER and L.M. BROWN
  Abstract | PDF file (38.62 KB)



• BEAM INDUCED VARIATIONS OF GaAs CATHODOLUMINESCENCE : EFFECT OF HYDROGEN AND DEFORMATION     p. C6-178
  A. DJEMEL, J. CASTAING and J. CHEVALLIER
  Abstract | PDF file (39.44 KB)



• CATHODOLUMINESCENCE AND POSITRON ANNIHILATION STUDY OF DEFECT DISTRIBUTION IN III-V WAFERS     p. C6-179
  F. DOMÍNGUEZ-ADAME, B. MÉNDEZ, J. PIQUERAS, N. DE DIEGO, J. LLOPIS and P. MOSER
  Abstract | PDF file (38.26 KB)



• OBSERVATION OF GETTERING PHENOMENA AT DEFECTS IN GaAs BY SIMULTANEOUS EBIC/CL MEASUREMENTS     p. C6-180
  M. ECKSTEIN, A. JAKUBOWICZ, M. BODE and H.-U. HABERMEIER
  Abstract | PDF file (33.08 KB)



• A NEW APPROACH FOR THE PHYSICAL INTERPRETATION OF TEMPERATURE DEPENDENT EBIC CONTRAST MEASUREMENTS     p. C6-181
  M. BODE and H.-U. HABERMEIER
  Abstract | PDF file (41.79 KB)



• ON THE TWO-DIMENSIONAL DETERMINATION OF p-n JUNCTIONS WITH THE EBIC COLLECTION PROBABILITY     p. C6-182
  W. HOPPE and M. KITTLER
  Abstract | PDF file (32.14 KB)



• POSSIBILITIES OF FORMATION OF BRIGHT EBIC CONTRASTS DUE TO CRYSTAL DEFECTS IN SILICON     p. C6-183
  H. BLUMTRITT, M. KITTLER and W. SEIFERT
  Abstract | PDF file (28.01 KB)



• MAJORITY CARRIER ASSESSMENT BY EBIC : DETERMINATION OF DOPANT CONCENTRATION AT COMPOSITION INHOMOGENEITIES     p. C6-184
  C. FRIGERI
  Abstract | PDF file (50.44 KB)



• DOPING PROFILE INSPECTION IN SILICON BY LOW ACCELERATION VOLTAGE SEM-EBIC     p. C6-185
  R. KUHNERT
  Abstract | PDF file (45.69 KB)



• MICROSCOPIC AND MACROSCOPIC EVALUATION OF THE RECOMBINATION CONTRAST IN PLASTICALLY DEFORMED AND ANNEALED SILICON BY MEANS OF EBIC-SEM     p. C6-186
  L.W. SNYMAN
  Abstract | PDF file (36.26 KB)



• EBIC MEASUREMENT OF BULK AND SURFACE RECOMBINATION IN p-TYPE SILICON : INFLUENCE OF OXIDATION AND HYDROGENATION     p. C6-187
  I. DELIDAIS, P. MAUGIS, D. BALLUTAUD, N. TABET and J.-L. MAURICE
  Abstract | PDF file (40.07 KB)