| Numéro |
J. Phys. Colloques
Volume 49, Numéro C4, Septembre 1988
ESSDERC 8818th European Solid State Device Research Conference |
|
|---|---|---|
| Page(s) | C4-457 - C4-460 | |
| DOI | https://doi.org/10.1051/jphyscol:1988497 | |
ESSDERC 88
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-457-C4-460
DOI: 10.1051/jphyscol:1988497
1 Compound Semiconductor Department, Electronics and Telecommunications Research Institute, PO Box 8, Daedok Science Town, Choongnam, Korea
2 Institute of Materials Science, University of Tsukuba, Sakura-mura, Ibaraki 305, Japan
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-457-C4-460
DOI: 10.1051/jphyscol:1988497
DEFECT CHARACTERIZATION OF Si+-IMPLANTED GaAs BY MONOENERGETIC POSITRON BEAM TECHNIQUE
J.-L. LEE1, K.-H. SHIM1, S. TANIGAWA2, A. UEDONO2, J.S. KIM1, H.M. PARK1 et D.S. MA11 Compound Semiconductor Department, Electronics and Telecommunications Research Institute, PO Box 8, Daedok Science Town, Choongnam, Korea
2 Institute of Materials Science, University of Tsukuba, Sakura-mura, Ibaraki 305, Japan
Abstract
Monoenergetic positrons with variable energies were used to study the depth distribution of implantation-induced vacancy-type defects in undoped CaAs and p-type Si. In B+ and As+- implanted Si substrates, parabolic-type distributions of vacancy-type defects were observed. In Si+-implanted GaAs, the concentration of vacancy-type defect decreased continuously with increasing depth below the surface. The distribution of defects changed into parabolic-type in annealing the Si+-implanted GaAs above the temperature of 900°C.