Table of contents
Le Journal de Physique Colloques
Vol. 49 No. C4 (Septembre 1988)
ESSDERC 88
18th European Solid State Device Research Conference
- SOI TECHNOLOGIES : THEIR PAST, PRESENT AND FUTURE
p. C4-3
J. HAISMA
Abstract | PDF file (396.7 KB) - CMOS-TECHNOLOGY - STATUS, TRENDS AND APPLICATIONS
p. C4-13
F. NEPPL and H.-J. PFLEIDERER
Abstract | PDF file (4.451 MB) - A HIGH PERFORMANCE LIQUID-NITROGEN CMOS SRAM TECHNOLOGY
p. C4-25
J.Y.-C. SUN, S. KLEPNER, Y. TAUR, H. HANAFI, P. RESTLE, T. BUCELOT, K. PETRILLO, R. DENNARD, S. SCHUSTER, T. CHAPPELL, B. CHAPPELL and D. HEIDEL
Abstract | PDF file (1.398 MB) - CHARACTERISATION OF NARROW-SPACED ISOLATION IN A TWIN RETROGRADE WELL SUBMICRON CMOS PROCESS
p. C4-29
P.A. van der PLAS, P.H.J. SPIJKERS and F.M. KLAASSEN
Abstract | PDF file (764.9 KB) - DEVICE CHARACTERISATION OF A HIGH DENSITY HALF-MICRON CMOS PROCESS
p. C4-33
P.H. WOERLEE, C.A.H. JUFFERMANS, H. LIFKA, A.J. WALKER, T. POORTER, H.J.H. MERKS-EPPINGBROEK and F.M. OUDE LANSINK
Abstract | PDF file (1.646 MB) - GENERATION LIFETIME AND HOLD TIME OF SMALL MOS DEVICES
p. C4-37
N.O. PEARCE, A.R. PEAKER and B. HAMILTON
Abstract | PDF file (486.0 KB) - CMOS TECHNOLOGY FOR CCD VIDEO MEMORIES
p. C4-41
G.J.T. DAVIDS, P.B. HARTOG, J.W. SLOTBOOM, G. STREUTKER, A.G. van der SIJDE and W. WIERTSEMA
Abstract | PDF file (1.067 MB) - EFFECTS OF MECHANICAL STRESS ON MOS STRUCTURES WITH TiSi2 GATES
p. C4-45
P.J. REUTERS, J. GIESE, M. OFFENBERG, W. RICHTER, S. EWERT and P. BALK
Abstract | PDF file (1.083 MB) - LATCH-UP FREE VLSI CMOS CIRCUITS CONSIDERING POWER-ON TRANSIENTS
p. C4-49
W. RECZEK, J. WINNERL and W. PRIBYL
Abstract | PDF file (1.975 MB) - NON-DESTRUCTIVE CHARACTERISATION OF DEVICE PROCESSING OF SILICON-ON-SAPPHIRE (SOS) WAFERS
p. C4-55
C. PICKERING, S. SHARMA, S. COLLINS, A.G. MORPETH, G.R. TERRY and A.M. HODGE
Abstract | PDF file (930.2 KB) - OSIRIS II, A TWO-DIMENSIONAL PROCESS SIMULATOR FOR SIMOX STRUCTURES
p. C4-59
I. SWEID, N. GUILLEMOT and G. KAMARINOS
Abstract | PDF file (405.7 KB) - ELECTRONIC PROPERTIES OF SILICON INTERFACES PREPARED BY DIRECT BONDING
p. C4-63
S. BENGTSSON and O. ENGSTRÖM
Abstract | PDF file (1.521 MB) - THEORETICAL ANALYSIS OF THE TWO-TERMINAL MOS CAPACITOR ON SOI SUBSTRATE
p. C4-67
P. PAELINCK, D. FLANDRE, A. TERAO and F. VAN de WIELE
Abstract | PDF file (960.5 KB) - SILICON SELECTIVE AND LATERAL OVERGROWTH EPITAXY : GROWTH AND ELECTRICAL EVALUATION FOR DEVICES
p. C4-71
J. FRIEDRICH, G.W. NEUDECK and S.T. LIU
Abstract | PDF file (807.3 KB) - HIGHER EFFICIENCY OF CMOS-PROCESS-COMPATIBLE PHOTODIODES IN SOI-TECHNIQUE BY REFLECTING FILMS
p. C4-75
K. KNOSPE and K. GOSER
Abstract | PDF file (1.277 MB) - COOL PLASMA ACTIVATED SURFACE IN SILICON WAFER DIRECT BONDING TECHNOLOGY
p. C4-79
G.-L. SUN, J. ZHAN, Q.-Y. TONG, S.-J. XIE, Y.-M. CAI and S.-J. LU
Abstract | PDF file (551.7 KB) - CIT 1 AND CIT 2, ADVANCED NON EPITAXIAL BIPOLAR/CMOS PROCESSES FOR ANALOG-DIGITAL VLSI
p. C4-85
C. VOLZ and L. BLOSSFELD
Abstract | PDF file (510.4 KB) - HIGH-SPEED OPTICAL DETECTION UP TO 2.5Gbit/s WITH A DOUBLE POLYSILICON SELF-ALIGNED SILICON BIPOLAR TRANSISTOR
p. C4-89
W. BOCK, L. TREITINGER and W. PRETTL
Abstract | PDF file (1.414 MB) - AN IMPROVED FULLY CMOS COMPATIBLE BIPOLAR STRUCTURE
p. C4-93
A. GÉRODOLLE, G. GIROULT, S. MARTIN and A. NOUAILHAT
Abstract | PDF file (701.2 KB) - WELL - OPTIMIZATION FOR HIGH SPEED BICMOS TECHNOLOGIES
p. C4-97
H. KLOSE, T. MEISTER, B. HOFFMANN, J. WENG and B. PFÄFFEL
Abstract | PDF file (900.0 KB) - AN ULTRA HIGH SPEED TRENCH ISOLATED DOUBLE POLYSILICON BIPOLAR PROCESS
p. C4-101
M.C. WILSON, S. DUNCAN and P.C. HUNT
Abstract | PDF file (939.8 KB) - A TRENCH ISOLATED HIGH SPEED BIPOLAR PROCESS FOR A 10K GATE, 950MHz, VLSI CIRCUIT
p. C4-105
C. MALLARDEAU, M. ROCHE, M. DEPEY, F. DELL'OVA, D. THOMAS, D. CELI, P. HUNT and A. HEFNER
Abstract | PDF file (2.454 MB) - SHALLOW DOPING PROFILES FOR HIGH-SPEED BIPOLAR TRANSISTORS
p. C4-109
K. EHINGER, H. KABZA, J. WENG, M. MIURA-MATTAUSCH, I. MAIER, H. SCHABER and J. BIEGER
Abstract | PDF file (1.718 MB) - TRENDS IN INDIUM PHOSPHIDE MICROELECTRONICS
p. C4-115
A. SCAVENNEC
Abstract | PDF file (850.7 KB) - HETEROSTRUCTURE FIELD EFFECT TRANSISTOR, PHYSICAL ANALYSIS AND NEW STRUCTURES
p. C4-125
G. SALMER
Abstract | PDF file (3.666 MB) - CHARGE PUMPING IN SILICON ON INSULATOR STRUCTURES USING GATED P-I-N DIODES
p. C4-137
T. ELEWA, H. HADDARA, S. CRISTOLOVEANU and M. BRUEL
Abstract | PDF file (1.600 MB) - A CONTACTLESS TECHNIQUE FOR THE CHARACTERIZATION OF INTERNALLY GETTERED CZ SILICON
p. C4-141
M.A. BRIERE
Abstract | PDF file (1.130 MB) - A MICROWAVE METHOD FOR CONTACTLESS MEASUREMENT OF THE LIFETIME OF FREE CARRIERS IN SILICON WAFERS
p. C4-145
T. OTAREDIAN, S. MIDDELHOEK and M.J.J. THEUNISSEN
Abstract | PDF file (1023 KB) - NUMERICAL SIMULATIONS TO IMPROVE THE ACCURACY OF ELECTRON-BEAM TESTING ON PASSIVATED INTEGRATED CIRCUITS
p. C4-149
H. FREMONT, A. TOUBOUL, D. GOBLED and Y. DANTO
Abstract | PDF file (957.2 KB) - ACCELERATION 1/F NOISE IN SILICON MOSFETs
p. C4-153
A.N. BIRBAS, Q. PENG, A. VAN DER ZIEL and A.D. VAN RHEENEN
Abstract | PDF file (331.8 KB) - SPATIAL DISTRIBUTION OF 1/f NOISE SOURCE
p. C4-157
L.K.J VANDAMME
Abstract | PDF file (1.194 MB) - ON THE ORIGIN OF 1/F NOISE IN MOS TRANSISTORS
p. C4-161
E.J.P. MAY
Abstract | PDF file (79.83 KB) - NOISE AND DIFFUSION IN p-TYPE SILICON
p. C4-165
J.P. NOUGIER, A. MOATADID and J.C. VAISSIERE
Abstract | PDF file (386.4 KB) - PROPERTIES OF WSi2 : OHMIC CONTACT TO N+ AND P+ Si, BARRIER BETWEEN Al AND Si, AND FEASIBILITY AS FIRST METAL IN MULTILEVEL METALLIZATION PROCESSES
p. C4-171
S.-L. ZHANG, M. HAMMAR, T. JOHANSSON and R. BUCHTA
Abstract | PDF file (1.088 MB) - EFFECTS OF COMPOUND FORMATION WITH DOPANTS IN TaSi2
p. C4-175
V. PROBST, H. KABZA and H. GOEBEL
Abstract | PDF file (584.6 KB) - NONSELECTIVE W/WSix -CVD TECHNOLOGY FOR LOW RESISTANCE VIA PLUGS ON ALUMINUM
p. C4-179
E. BERTAGNOLLI, C. WIECZOREK, B. HOFFMANN and H. SCHABER
Abstract | PDF file (1.454 MB) - CONTROL OF A SELF-ALIGNED W SILICIDE PROCESS BY ANNEALING AMBIENCE
p. C4-183
J. TORRES, J. PALLEAU, N. BOURHILA, J.C. OBERLIN, A. DENEUVILLE and M. BENYAHIA
Abstract | PDF file (689.7 KB) - MODELLING DIFFUSION IN SILICIDES
p. C4-187
P.B. MOYNAGH, A.A. BROWN and P.J. ROSSER
Abstract | PDF file (810.1 KB) - DEGRADATION OF THE POLY-Si/SILICIDE STRUCTURE IN ADVANCED MOS-TECHNOLOGIES
p. C4-191
P. LIPPENS, K. MAEX, L. VAN den HOVE, R. DE KEERSMAECKER, V. PROBST, W. KOPPENOL and W. van der WEG
Abstract | PDF file (1.236 MB) - A FULLY CHARACTERISED PROCESS FOR TITANIUM SILICIDE BY RTA FOR ONE MICRON CMOS
p. C4-195
N.F. STOGDALE
Abstract | PDF file (670.3 KB) - OUTPUT IMPEDANCE FREQUENCY DISPERSION AND LOW FREQUENCY NOISE IN GaAs MESFETs
p. C4-201
D. GITLIN, C.R. VISWANATHAN and A.A. ABIDI
Abstract | PDF file (711.1 KB) - InGaAs SINGLE- AND DUAL-GATE HIGH-SPEED FETs : PREPARATION AND PERFORMANCE
p. C4-205
K. STEINER, K. NTIKBASANIS, U. SEILER, K. HEIME and E. KUPHAL
Abstract | PDF file (619.9 KB) - DEPLETION AND ENHANCEMENT MODE Si3N4/GaInAs MISFETs WITH NO CURRENT DRIFT
p. C4-209
M. RENAUD, P. BOHER, J. SCHNEIDER, J. BARRIER, D. SCHMITZ, M. HEYEN and H. JÜRGENSEN
Abstract | PDF file (1.289 MB) - IN SITU PROCESSING OF InP BY FLASH LPCVD FOR SURFACE PREPARATION AND GATE OXIDE DEPOSITION
p. C4-213
Y.I. NISSIM, C. LICOPPE, J.M. MOISON and C. MERIADEC
Abstract | PDF file (147.2 KB) - HIGH PERFORMANCE SCHOTTKY DIODE AND FET ON InP
p. C4-217
S. LOUALICHE, A. GINOUDI, H. L'HARIDON, M. SALVI, A. LE CORRE, D. LECROSNIER and P.N. FAVENNEC
Abstract | PDF file (196.8 KB) - ION IMPLANTED InP MISFET's WITH LOW DRAIN CURRENT DRIFT
p. C4-223
G. POST, P. DIMITRIOU, A. FALCOU, N. DUHAMEL and G. MERMANT
Abstract | PDF file (913.8 KB) - INTERFACE STATES PARAMETERS DEDUCED FROM DLTS, ICTS AND CONDUCTANCE METHODS ON TiAu/Si3N4/GaInAs MIS STRUCTURES
p. C4-227
J. BARRIER, M. RENAUD, P. BOHER and J. SCHNEIDER
Abstract | PDF file (1.044 MB) - MEGAPIXEL IMAGE SENSORS TECHNOLOGY
p. C4-233
R.P. KHOSLA
Abstract | PDF file (340.8 KB) - TIME DEPENDENT BEHAVIOUR OF FIELD LIMITING RING PASSIVATION SYSTEMS
p. C4-241
M.K. JOHNSON, D.J. COE, A.D. ANNIS and J.N. SANDOE
Abstract | PDF file (750.5 KB) - 3D MOSFET DEVICE EFFECTS DUE TO FIELD OXIDE
p. C4-245
M. THURNER and S. SELBERHERR
Abstract | PDF file (469.9 KB) - NOVEL CALCULATIONS IN THE FIELD OF ACCURATE ANALYTICAL MOS TRANSISTOR MODELLING
p. C4-249
L. LAUWERS and K. DE MEYER
Abstract | PDF file (557.4 KB) - A NEW ANALYTICAL AND STATISTICAL-ORIENTED APPROACH FOR THE TWO-DIMENSIONAL ANALYSIS OF SHORT-CHANNEL MOSFET's
p. C4-253
M. CONTI, C. TURCHETTI and G. MASETTI
Abstract | PDF file (838.6 KB) - THE SERIES RESISTANCE OF SUBMICRON MOSFETs AND ITS EFFECT ON THEIR CHARACTERISTICS
p. C4-257
F.M. KLAASSEN, P.T.J. BIERMANS and R.M.D. VELGHE
Abstract | PDF file (507.2 KB) - ANALYTICAL ANALYSIS OF PUNCHTHROUGH IN BURRIED CHANNEL P-MOSFETs
p. C4-261
T. SKOTNICKI, G. MERCKEL and T. PEDRON
Abstract | PDF file (204.3 KB) - A MOBILITY MODEL FOR MOSFET DEVICE DIMULATION
p. C4-265
A.J. WALKER and P.H. WOERLEE
Abstract | PDF file (174.2 KB) - "WCAP" : WORST CASE ANALYSIS PROGRAM : A TOOL FOR STATISTICAL CIRCUIT SIMULATION
p. C4-269
N. BALLAY and B. BAYLAC
Abstract | PDF file (147.4 KB) - BAND-TAIL SHOCKLEY-READ-HALL RECOMBINATION IN HEAVILY DOPED SILICON
p. C4-275
M.Y. GHANNAM, R.P. MERTENS, S.C. JAIN, J.F. NIJS and R. VAN OVERSTRAETEN
Abstract | PDF file (1.358 MB) - GATE OXIDE QUALITY OF DRAM TRENCH CAPACITORS
p. C4-283
S. RÖHL, M. ENGELHARDT, W.-U. KELLNER and A. SCHLEMM
Abstract | PDF file (1.897 MB) - IMPROVING RELIABILITY USING DESIGN CENTERING
p. C4-287
W. HEIMSCH, R. KREBS, K. ZIEMANN and D. MOEBUS
Abstract | PDF file (459.7 KB) - ELECTRON BEAM DIRECT WRITE EFFECTS ON CMOS DEVICES
p. C4-291
K. BARLOW
Abstract | PDF file (358.8 KB) - EFFECTS OF GAMMA RADIATION ON TRENCH ISOLATED CMOS
p. C4-295
P.L. MEDHURST and D.J. FOSTER
Abstract | PDF file (608.8 KB) - THE INFLUENCE OF X-RAY DAMAGE ON ELECTRON-INDUCED INTERFACE DEGRADATION IN MOS CAPACITORS
p. C4-299
U. SCHWALKE, E.P. JACOBS and B. BREITHAUPT
Abstract | PDF file (1.607 MB) - MOS-DEGRADATION IN INPUT AND OUTPUT STAGES OF VLSI-CMOS-CIRCUITS DUE TO ELECTROSTATIC DISCHARGE
p. C4-303
X. GUGGENMOS
Abstract | PDF file (1.215 MB)