| Numéro |
J. Phys. Colloques
Volume 42, Numéro C6, Décembre 1981
International Conference on Phonon Physics
|
|
|---|---|---|
| Page(s) | C6-244 - C6-246 | |
| DOI | https://doi.org/10.1051/jphyscol:1981670 | |
International Conference on Phonon Physics
J. Phys. Colloques 42 (1981) C6-244-C6-246
DOI: 10.1051/jphyscol:1981670
1 Department of Physics, Nottingham University, Nottingham NG7 2RD, U.K.
2 Service B T, CENG, 85X, 38041 Grenoble Cedex, France
J. Phys. Colloques 42 (1981) C6-244-C6-246
DOI: 10.1051/jphyscol:1981670
PHONON SCATTERING BY Cr IONS IN GaAs AND THE EFFECT OF UNIAXIAL STRESS
A. Ramdane1, B. Salce2, L.J. Challis1 et M. Locatelli21 Department of Physics, Nottingham University, Nottingham NG7 2RD, U.K.
2 Service B T, CENG, 85X, 38041 Grenoble Cedex, France
Abstract
Thermal conductivity measurements in the range 50mK to 100K on n ; p and SI samples of Cr doped GaAs show that Cr2+ only scatters phonons at [MATH]5 GHz while Cr3+ has several resonant frequencies in the range 20 to 700GHz. Measurements under uniaxial stress indicate very anisotropic behaviour qualitatively consistent with a Jahn-Teller model for Cr3+.