| Numéro |
J. Phys. Colloques
Volume 42, Numéro C6, Décembre 1981
International Conference on Phonon Physics
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|---|---|---|
| Page(s) | C6-664 - C6-666 | |
| DOI | https://doi.org/10.1051/jphyscol:19816194 | |
International Conference on Phonon Physics
J. Phys. Colloques 42 (1981) C6-664-C6-666
DOI: 10.1051/jphyscol:19816194
Department of Physics, University of Nottingham, University Park, Nottingham, NG7 2RD, England
J. Phys. Colloques 42 (1981) C6-664-C6-666
DOI: 10.1051/jphyscol:19816194
PHONON SPECTROSCOPY OF CHROMIUM-DOPED GALLIUM ARSENIDE USING SUPERCONDUCTING TUNNEL JUNCTIONS
M. Hamdache, P.J. King, D.T. Murphy et V.W. RamptonDepartment of Physics, University of Nottingham, University Park, Nottingham, NG7 2RD, England
Abstract
Phonon spectroscopy measurements have been made on a variety of chromium-doped gallium arsenide samples over the range 3 cm-1 (90 GHz) to 24 cm-1 (720 GHz) at 1 K. In semi-insulating samples and in weakly p-type samples a cluster of three partially resolved resonant absorptions at 4.2 cm-1 4.9 cm-1 and 5.6 cm-1 are found, together with a weaker but broader absorption at 10 cm-1. These absorptions are not affected by sub-band gap illumination. In n-type samples these features are not found under dark conditions, but may be induced by illumination.